2SC2383 Y(160-320)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC2383 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURE z High voltage: VCEO=160V z Large continuous collector current capability 2. COLLECTOR 3. EMITTER MARKING：2383 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Test conditions Min Max Unit IC= 100μA , IE=0 160 V IC= 10mA, IB=0 160 V V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=150V, IE=0 1 μA Emitter cut-off current IEBO VEB=6V, IC=0 1 μA DC current gain hFE VCE=5V, IC=200mA Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Collector-emitter saturation voltage * Symbol * 100 320 IC=500m A, IB=50mA VCE(sat) Base-emitter voltage VBE IC=5mA, VCE= 5V Transition frequency fT VCE=5V, IC=200mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 0.45 1 V 0.75 V 20 MHz 20 pF pulse test CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 www.cj-elec.com 1 D,Nov,2015 A,Jun,2014 Typical Characteristics Static Characteristic 300 COMMON EMITTER Ta=25℃ (mA) 250 1mA IC 0.7mA 150 0.6mA 0.5mA 100 0.4mA IC Ta=100℃ hFE DC CURRENT GAIN 0.8mA 200 —— COMMON EMITTER VCE= 5V 1000 0.9mA COLLECTOR CURRENT hFE 3000 Ta=25℃ 100 10 0.3mA 0.2mA 50 IB=0.1mA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 1 0.1 7 IC VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 100 1000 (mA) IC β=10 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC 1000 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 1000 1 10 100 COLLECTOR CURREMT (mA) VBE fT 100 —— IC 1000 (mA) IC (MHz) COMMON EMITTER VCE=5V (mA) 10 COLLECTOR CURRENT 1000 β=10 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a fT 80 IC COLLECTOR CURRENT 1 VCE (V) 10 1 60 40 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0 200 400 600 800 1000 20 20 1200 40 80 1000 Cob/Cib —— VCB/VEB 100 CAPACITANCE C (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ Cib Cob 10 160 —— IC 200 (mA) Ta 500 400 300 200 100 0 1 REVERSE VOLTAGE www.cj-elec.com PC 600 f=1MHz IE=0/IC=0 1 0.1 120 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) D,Nov,2015 A,Jun,2014 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 3 D,Nov,2015 A,Jun,2014 SOT-89-3L Tape and Reel www.cj-elec.com 4 D,Nov,2015 A,Jun,2014